The MJD32CT4 is a PNP transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 3A. It features a gain bandwidth product of 3MHz and a current gain (hFE) of at least 25. The device is packaged in a TO-252-3 package and is rated for operation between -65°C and 150°C. It is not RoHS compliant.
Sign in to ask questions about the Onsemi MJD32CT4 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi MJD32CT4 technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MJD32CT4 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
