PNP Bipolar Junction Transistor (BJT) in DPAK package. Features 100V collector-emitter voltage (VCEO) and 3A continuous collector current. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1.56W. Supplied on a 2500-piece tape and reel, this RoHS compliant component is designed for surface-mount applications.
Frequency3MHz
PackageDPAK
Current Rating-3A
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi MJD32CT4G technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.2V
Current Rating
-3A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
2.38mm
hFE Min
25
Lead Free
Lead Free
Length
6.73mm
Max Breakdown Voltage
100V
Max Collector Current
3A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.56W
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.56W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
3MHz
DC Rated Voltage
-100V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MJD32CT4G Datasheet
Download the complete datasheet for Onsemi MJD32CT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
