PNP Bipolar Junction Transistor (BJT) for power applications. Features a 100V collector-emitter breakdown voltage and a 3A continuous collector current rating. Operates with a maximum power dissipation of 1.56W and a transition frequency of 3MHz. Packaged in a DPAK surface-mount case, this lead-free component is RoHS compliant.
Onsemi MJD32CTF technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 2.3mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| Weight | 0.26037g |
| Width | 6.1mm |
| RoHS | Compliant |
No datasheet is available for this part.
