The MJD32CTF_NBDD002 is a surface-mount PNP transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 3A. It has a gain bandwidth product of 3MHz and a maximum power dissipation of 1.56W. The transistor operates over a temperature range of -65°C to 150°C and is packaged in a DPAK case.
Frequency3MHz
PackageDPAK
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi MJD32CTF_NBDD002 technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD32CTF_NBDD002 Datasheet
Download the complete datasheet for Onsemi MJD32CTF_NBDD002 to view detailed technical specifications.
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