PNP Bipolar Power Transistor, TO-252-3 package. Features 40V Collector-Emitter Voltage (VCEO) and 40V Collector Base Voltage (VCBO). Offers a maximum collector current of 3A and a minimum hFE of 25. Operates with a transition frequency of 3MHz and a maximum power dissipation of 1.56W. This lead-free, RoHS compliant component is supplied on a tape and reel with 1800 units.
Frequency3MHz
PackageTO-252-3
Current Rating-3A
PolarityPNP
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Technical Specifications
Onsemi MJD32RLG technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Package Quantity | 1800 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD32RLG Datasheet
Download the complete datasheet for Onsemi MJD32RLG to view detailed technical specifications.
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