PNP Bipolar Junction Transistor (BJT) in DPAK package. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current rating of 3A. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1.56W. This component is lead-free and RoHS compliant.
Frequency3MHz
PackageDPAK
Current Rating-3A
PolarityPNP
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Onsemi MJD32T4G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Onsemi MJD32T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD32T4G Datasheet
Download the complete datasheet for Onsemi MJD32T4G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
