The MJD340T4 is a TO-252-3 packaged NPN Bipolar Junction Transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 500mA. It has a high current gain of 30 and a maximum power dissipation of 1.56W. The transistor is RoHS compliant and has a maximum operating temperature of 150°C. It is available in a tape and reel packaging with a quantity of 10 units per reel.
PackageTO-252-3
Current Rating500mA
PolarityNPN
Power15W
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Technical Specifications
Onsemi MJD340T4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 15W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD340T4 Datasheet
Download the complete datasheet for Onsemi MJD340T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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