The MJD42CT4 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a saturation voltage of 1.5V. It has a maximum collector current of 6A and a gain bandwidth product of 3MHz. The transistor is packaged in a TO-252-3 package and is rated for operation between -65°C and 150°C. It is not RoHS compliant and contains lead.
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Onsemi MJD42CT4 technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| RoHS | Not Compliant |
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