The MJD44H11-001 is a NPN transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 8A. It has a gain bandwidth product of 85MHz and a maximum power dissipation of 1.75W. The transistor is packaged in a TO-251-3 case and is rated for operation between -55°C and 150°C. It is not RoHS compliant and contains lead.
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| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 85MHz |
| hFE Min | 60 |
| Lead Free | Contains Lead |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 85MHz |
| DC Rated Voltage | 80V |
| RoHS | Not Compliant |
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