NPN bipolar power transistor with 80V collector-emitter breakdown voltage and 8A maximum collector current. Features a 1.75W power dissipation and 85MHz transition frequency. Packaged in a TO-251-3 (DPAK INSERTION MOUNT) for surface mounting, this component is halogen-free, lead-free, and RoHS compliant, operating from -55°C to 150°C.
Frequency85MHz
PackageTO-251-3
Current Rating8A
PolarityNPN
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Technical Specifications
Onsemi MJD44H11-1G technical specifications.
General
Package/Case
TO-251-3
Collector Base Voltage (VCBO)
5V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1V
Current Rating
8A
Emitter Base Voltage (VEBO)
5V
Frequency
85MHz
Gain Bandwidth Product
85MHz
Halogen Free
Halogen Free
hFE Min
60
Lead Free
Lead Free
Max Collector Current
8A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.75W
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
1.75W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
85MHz
DC Rated Voltage
80V
Compliance
RoHS
Compliant
Datasheet
Onsemi MJD44H11-1G Datasheet
Download the complete datasheet for Onsemi MJD44H11-1G to view detailed technical specifications.
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