NPN bipolar power transistor with 80V collector-emitter breakdown voltage and 8A maximum collector current. Features a 1.75W power dissipation and 85MHz transition frequency. Packaged in a TO-251-3 (DPAK INSERTION MOUNT) for surface mounting, this component is halogen-free, lead-free, and RoHS compliant, operating from -55°C to 150°C.
Frequency85MHz
PackageTO-251-3
Current Rating8A
PolarityNPN
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Technical Specifications
Onsemi MJD44H11-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 85MHz |
| Gain Bandwidth Product | 85MHz |
| Halogen Free | Halogen Free |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 85MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD44H11-1G Datasheet
Download the complete datasheet for Onsemi MJD44H11-1G to view detailed technical specifications.
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