NPN bipolar junction transistor (BJT) in a DPAK package, featuring a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. This component offers a transition frequency of 85MHz and a maximum power dissipation of 1.75W. It operates within a temperature range of -55°C to 150°C and is RoHS compliant. The transistor is supplied in a rail/tube package.
Frequency85MHz
PackageDPAK
Current Rating8A
PolarityNPN
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Technical Specifications
Onsemi MJD44H11G technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
5V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1V
Current Rating
8A
Emitter Base Voltage (VEBO)
5V
Frequency
85MHz
Gain Bandwidth Product
85MHz
Halogen Free
Halogen Free
Height
2.38mm
hFE Min
60
Lead Free
Lead Free
Length
6.73mm
Max Collector Current
8A
Max Frequency
85MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.75W
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
1.75W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
85MHz
DC Rated Voltage
80V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MJD44H11G Datasheet
Download the complete datasheet for Onsemi MJD44H11G to view detailed technical specifications.
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