The MJD44H11T5G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 8A. It has a gain bandwidth product of 85MHz and is packaged in a DPAK-3 package. The transistor is RoHS compliant and lead free, with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is suitable for use in a variety of applications, including those requiring high current and high frequency operation.
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| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 85MHz |
| Halogen Free | Halogen Free |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 85MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
These are design resources that include the Onsemi MJD44H11T5G
Onsemi product discontinuance notice PD23527Z for various image sensors, power management ICs, and discrete components. Last time buy date is April 9, 2021.
Quarterly product discontinuance notice from ON Semiconductor for various discrete, analog, and power products, including last buy and ship dates for 2007.
