
NPN Power Bipolar Junction Transistor (BJT) for surface mount applications. Features an 8A continuous collector current and 80V collector-emitter breakdown voltage. Offers a maximum power dissipation of 1.75W and a transition frequency of 50MHz. Packaged in DPAK for tape and reel distribution, this component is RoHS compliant and lead-free.
Onsemi MJD44H11TM technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 80V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJD44H11TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
