The MJD45H11T4 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 8A. It has a gain bandwidth product of 90MHz and a transition frequency of 90MHz. The transistor is packaged in a TO-252-3 package and is lead-free. It has a maximum power dissipation of 1.75W and operates over a temperature range of -55°C to 150°C.
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| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 90MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 90MHz |
| DC Rated Voltage | -80V |
| RoHS | Not Compliant |
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