
NPN Bipolar Junction Transistor (BJT) in DPAK package, featuring a 250V collector-emitter breakdown voltage and a 1A maximum collector current. This power transistor offers a 1V collector-emitter saturation voltage and a 350V collector-base voltage. With a transition frequency of 10MHz and a minimum hFE of 30, it operates within a temperature range of -65°C to 150°C. The component is RoHS compliant and supplied in a 75-piece rail/tube.
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Onsemi MJD47G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 2.38mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Collector Current | 1A |
| Max Frequency | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 250V |
| Width | 6.22mm |
| RoHS | Compliant |
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