NPN Darlington bipolar junction transistor in a DPAK package. Features 80V collector-emitter voltage (VCEO) and 4A continuous collector current. Offers a maximum power dissipation of 1.75W and a low collector-emitter saturation voltage of 2.5V. Operates across a temperature range of -65°C to 150°C, is halogen-free, lead-free, and RoHS compliant. Packaged in tape and reel.
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Onsemi MJD6039T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
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