NPN Bipolar Junction Transistor (BJT) for power applications. Features a 400V collector-emitter breakdown voltage and a 1.5A maximum collector current. Offers a low collector-emitter saturation voltage of 500mV. Housed in a TO-126-3 package with through-hole mounting. Operates across a wide temperature range from -65°C to 150°C. This RoHS compliant component has a maximum power dissipation of 1.4W.
PackageTO-126-3
Current Rating1.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MJE13003G technical specifications.
General
| Package/Case | TO-126-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 13.64mm |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SWITCHMODE™ |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE13003G Datasheet
Download the complete datasheet for Onsemi MJE13003G to view detailed technical specifications.
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