NPN Bipolar Junction Transistor (BJT) in TO-220-3 package, designed for through-hole mounting. Features a 400V collector-emitter breakdown voltage and a 4A continuous collector current rating. Offers a maximum collector-emitter saturation voltage of 1V and a minimum DC current gain (hFE) of 10. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 75W. Includes a transition frequency of 4MHz.
PackageTO-220-3
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MJE13005 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 10 |
| Lead Free | Contains Lead |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Series | SWITCHMODE™ |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJE13005 Datasheet
Download the complete datasheet for Onsemi MJE13005 to view detailed technical specifications.
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