PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 8A and a collector-emitter voltage of 120V. Features a 50W power dissipation and a transition frequency of 30MHz. This TO-220-3 packaged transistor offers a minimum hFE of 40 and operates within a temperature range of -65°C to 150°C.
Frequency30MHz
PackageTO-220-3
Current Rating8A
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi MJE15029 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 40 |
| Lead Free | Contains Lead |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 50W |
| RoHS Compliant | No |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 120V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJE15029 Datasheet
Download the complete datasheet for Onsemi MJE15029 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.