PNP Bipolar Junction Power Transistor featuring a 160V collector-emitter breakdown voltage and a 16A continuous collector current. This through-hole component offers a maximum power dissipation of 125W and operates within a temperature range of -65°C to 150°C. It boasts a transition frequency of 1MHz and a minimum DC current gain (hFE) of 15. Packaged in a TO-247 (SOT-93) case, this RoHS compliant device is supplied in a 30-piece rail/tube.
Frequency1MHz
PackageSOT-93
Current Rating-16A
MountingThrough Hole
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Technical Specifications
Onsemi MJE4353G technical specifications.
General
| Package/Case | SOT-93 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 3.5V |
| Current Rating | -16A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 1MHz |
| Gain Bandwidth Product | 1MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 125W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 1MHz |
| DC Rated Voltage | -160V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE4353G Datasheet
Download the complete datasheet for Onsemi MJE4353G to view detailed technical specifications.
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