High-speed switching diode with a maximum repetitive reverse voltage of 100V and a 200mA forward current. Features a low capacitance of 4pF and a fast reverse recovery time of 4ns. This single element diode is housed in a compact SOT-23-3 package, suitable for high-density applications. Operating temperature range spans from -55°C to 150°C, with a power dissipation of 300mW. Halogen-free and RoHS compliant, supplied in a 3000-piece tape and reel.
Sign in to ask questions about the Onsemi MMBD914LT1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi MMBD914LT1G technical specifications.
| Average Rectified Current | 200mA |
| Capacitance | 4pF |
| Package/Case | SOT-23-3 |
| Current Rating | 200mA |
| Diode Capacitance-Max | 4pF |
| Element Configuration | Single |
| Forward Current | 200mA |
| Halogen Free | Halogen Free |
| Height | 0.94mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Forward Surge Current (Ifsm) | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Current | 5uA |
| Max Reverse Leakage Current | 5uA |
| Max Reverse Voltage (DC) | 100V |
| Max Surge Current | 500mA |
| Output Current | 200mA |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 500mA |
| Polarity | Standard |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 4ns |
| Reverse Recovery Time-Max | 4ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBD914LT1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
