This device is an N-channel enhancement-mode DMOS field-effect transistor in a SOT-23 package. It is rated for 60 V drain-source voltage, 500 mA continuous drain current, and ±20 V gate-source voltage. The transistor is designed for low-voltage, low-current switching applications including small servo motor control, power MOSFET gate drivers, and general switching functions. It provides low on-state resistance with 1.2 Ω typical at VGS = 10 V and ID = 200 mA, along with fast switching performance with 10 ns maximum turn-on and turn-off times. The operating and storage junction temperature range is -55°C to 150°C, and the device is specified as Pb-free.
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Onsemi MMBF170 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.21.00.95 |
| REACH | Compliant |
| Military Spec | False |
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