N-Channel MOSFET, SOT-23-3 package, featuring 60V drain-source breakdown voltage and 500mA continuous drain current. Offers a low 5 Ohm drain-source on-resistance and 225mW power dissipation. Operates across a -55°C to 150°C temperature range with 3V threshold voltage. Includes 10ns turn-on and turn-off delay times.
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Onsemi MMBF170LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 500mA |
| Current Rating | 500mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Drain-source On Resistance-Max | 5R |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.94mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Width | 1.3mm |
| RoHS | Compliant |
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