N-Channel JFET, single element configuration, designed for small signal applications. Features a 20V Drain to Source Breakdown Voltage (Vdss) and a maximum Continuous Drain Current (ID) of 300mA. Offers a low Drain-source On Resistance (Rds On) of 1 Ohm. Packaged in a compact SOT-323-3 (SC-70) surface-mount package, supplied on a 3000-piece tape and reel. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW.
PackageSOT-323-3
Current Rating300mA
PolarityN-CHANNEL
Power150mW
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Technical Specifications
Onsemi MMBF2201NT1G technical specifications.
General
| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 300mA |
| Current Rating | 300mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1R |
| Element Configuration | Single |
| Fall Time | 2.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 45pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Nominal Vgs | 1.7V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 1R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 2.5ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBF2201NT1G Datasheet
Download the complete datasheet for Onsemi MMBF2201NT1G to view detailed technical specifications.
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