
N-channel JFET transistor in a SOT-23 surface mount package. Features a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 30mA. Offers a drain-to-source resistance of 100 Ohms and a gate-to-source voltage (Vgs) of -30V. Maximum power dissipation is 350mW, with operating temperatures ranging from -55°C to 150°C. Packaged on tape and reel with 3000 units per reel. RoHS compliant.
Onsemi MMBF4393 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 30mA |
| Drain to Source Resistance | 100R |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | -30V |
| Height | 0.93mm |
| Input Capacitance | 14pF |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBF4393 to view detailed technical specifications.
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