N-Channel JFET for general-purpose amplification. Features a 25V drain-to-source voltage (Vdss) and a 200µA continuous drain current (ID). Operates with a gate-to-source voltage (Vgs) up to -25V and offers a maximum power dissipation of 350mW. Packaged in a SOT-23-3 surface-mount case, this component is RoHS compliant and supplied on a 3000-piece tape and reel.
PackageSOT-23-3
Current Rating10mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi MMBF5458 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 200uA |
| Current Rating | 10mA |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | -25V |
| Height | 1.04mm |
| Input Capacitance | 7pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBF5458 Datasheet
Download the complete datasheet for Onsemi MMBF5458 to view detailed technical specifications.
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