N-Channel RF FET transistor in a SOT-23 surface mount package. Features a continuous drain current of 20mA, a DS breakdown voltage of -25V, and operates up to 400MHz. Maximum power dissipation is 225mW, with a noise figure of 4dB. This component is lead-free and RoHS compliant, supplied on tape and reel.
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| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 20mA |
| DS Breakdown Voltage-Min | -25V |
| Frequency | 400MHz |
| Gate to Source Voltage (Vgs) | -25V |
| Height | 0.93mm |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Noise Figure | 4dB |
| Output Power | 225mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Test Voltage | 15V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
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