P-channel Junction Field-Effect Transistor (JFET) in a 3-pin SOT-23 package, designed for surface-mount applications. Features a continuous drain current of -1nA and a current rating of -60mA. Offers a drain-to-source voltage (Vdss) of 25V and a gate-to-source voltage (Vgs) of 25V. Exhibits an on-state resistance of 125 Ohms and an input capacitance of 11pF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 225mW. This component is RoHS and Halogen Free, supplied in tape and reel packaging.
PackageSOT-23-3
Current Rating-60mA
PolarityP-CHANNEL
Power225mW
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Technical Specifications
Onsemi MMBFJ175LT1G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
-1nA
Current Rating
-60mA
Drain to Source Resistance
125R
Drain to Source Voltage (Vdss)
25V
Gate to Source Voltage (Vgs)
25V
Halogen Free
Halogen Free
Height
0.04inch
Input Capacitance
11pF
Lead Free
Lead Free
Length
0.119inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
On-State Resistance
125R
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
225mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-25V
Weight
0.050717oz
Width
0.055inch
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBFJ175LT1G Datasheet
Download the complete datasheet for Onsemi MMBFJ175LT1G to view detailed technical specifications.
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