
P-channel Junction Field-Effect Transistor (JFET) in a SOT-23 surface mount package. Features a continuous drain current of -25mA, drain to source voltage (Vdss) of 30V, and gate to source voltage (Vgs) of 30V. Offers a drain to source resistance of 250 Ohms and a maximum power dissipation of 225mW. Operates across a temperature range of -55°C to 150°C. Supplied in tape and reel packaging.
Onsemi MMBFJ176 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | -25mA |
| Current Rating | 25mA |
| Drain to Source Resistance | 250R |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 0.93mm |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBFJ176 to view detailed technical specifications.
No datasheet is available for this part.
