N-channel RF power field effect transistor in a SOT-23-3 package. Features a 25V drain-to-source breakdown voltage and 25V gate-to-source voltage. Offers a typical gain of 12dB at 10V test voltage and a 60mA current rating. Dissipates up to 225mW with a maximum operating temperature of 150°C. This component is RoHS and Halogen Free compliant.
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Onsemi MMBFJ310LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Current Rating | 60mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Gain | 12dB |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Height | 0.04inch |
| Input Capacitance | 5pF |
| Lead Free | Lead Free |
| Length | 0.119inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Test Voltage | 10V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| Width | 0.055inch |
| RoHS | Compliant |
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