NPN bipolar junction transistor in a SOT-723-3 package. Features a collector-emitter breakdown voltage of 40V, collector current up to 600mA, and a maximum power dissipation of 640mW. Operates with a transition frequency of 300MHz and a wide temperature range from -55°C to 150°C. This RoHS compliant component is supplied on an 8000-piece tape and reel.
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Onsemi MMBT2222AM3T5G technical specifications.
| Package/Case | SOT-723-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 640mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 640mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| RoHS | Compliant |
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