NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Operates with a transition frequency of 300MHz and a minimum DC current gain (hFE) of 75. Designed for surface mount applications with a compact 1.7mm x 0.98mm x 0.78mm package, supplied on a 3000-piece tape and reel. This RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency300MHz
MountingSurface Mount
PolarityNPN
Power250mW
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Technical Specifications
Onsemi MMBT2222AT technical specifications.
General
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 0.78mm |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Weight | 0.03g |
| Width | 0.98mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT2222AT Datasheet
Download the complete datasheet for Onsemi MMBT2222AT to view detailed technical specifications.
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