The MMBT2222AWT3G is a NPN bipolar junction transistor with a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The transistor is packaged in a small outline R-PDSO-G3 package and is available in quantities of 10,000 per reel. It is compliant with RoHS regulations and has a lead-free composition.
PolarityNPN
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Technical Specifications
Onsemi MMBT2222AWT3G technical specifications.
General
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT2222AWT3G Datasheet
Download the complete datasheet for Onsemi MMBT2222AWT3G to view detailed technical specifications.
No datasheet is available for this part.
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