The MMBT2484LT3G is a single NPN transistor with a collector base voltage of 60V and a maximum collector current of 100mA. It has a gain bandwidth product of 650MHz and a maximum power dissipation of 225mW. The transistor is packaged in a SOT-23-3 package and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSOT-23-3
PolarityNPN
Power300mW
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Technical Specifications
Onsemi MMBT2484LT3G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 350mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 650MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT2484LT3G Datasheet
Download the complete datasheet for Onsemi MMBT2484LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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