
PNP Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a maximum collector current of 800mA and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
Onsemi MMBT2907A technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Voltage | 60V |
| DC Rated Voltage | -60V |
| Weight | 0.002116oz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT2907A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.