
NPN Bipolar Junction Transistor (BJT) in a SOT-416 (SC-75) 3-lead SMD package. Features a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a 300MHz transition frequency and a minimum hFE of 40. Operates from -55°C to 150°C with 300mW power dissipation. Supplied on a 3000-piece tape and reel.
Onsemi MMBT3904TT1G technical specifications.
| Package/Case | SOT-416 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 0.8mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| Width | 0.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT3904TT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
