
PNP Bipolar Junction Transistor in SOT-23 package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. Surface mountable and RoHS compliant.
Onsemi MMBT3906 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | -40V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -40V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT3906 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
