
PNP bipolar junction transistor in a SOT-23-3 package. Features a 40V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Offers a transition frequency of 250MHz and a minimum hFE of 60. Dissipates up to 300mW with an operating temperature range of -55°C to 150°C. Packaged on tape and reel.
Onsemi MMBT3906LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | -40V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 0.94mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -40V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT3906LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
