PNP Epitaxial Silicon Transistor for surface mount applications. Features a maximum collector current of 200mA and a collector-emitter voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 227mW. Packaged in tape and reel.
Frequency250MHz
MountingSurface Mount
PolarityPNP
Power227mW
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Technical Specifications
Onsemi MMBT3906SL technical specifications.
General
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 0.38mm |
| hFE Min | 100 |
| Length | 0.85mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 227mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Weight | 0.022g |
| Width | 0.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT3906SL Datasheet
Download the complete datasheet for Onsemi MMBT3906SL to view detailed technical specifications.
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