NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 25V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a 300MHz transition frequency and a minimum hFE of 120. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 225mW. Packaged in a 3000-piece tape and reel.
Onsemi MMBT4124LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT4124LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
