
PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a maximum collector current of 200mA and a collector-emitter voltage of 25V. Offers a transition frequency of 250MHz and a minimum hFE of 120. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Supplied on a 3000-piece tape and reel.
Onsemi MMBT4126LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 1.11mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -25V |
| Width | 2.64mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT4126LT1G to view detailed technical specifications.
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