PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 25V. Offers a minimum hFE of 120 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C. Supplied on a 10000-piece tape and reel, this RoHS compliant component is lead-free.
Onsemi MMBT4126LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 250MHz |
| Height | 1.11mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Collector Current | 200mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MMBT4126LT1 |
| Transition Frequency | 250MHz |
| Width | 2.64mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT4126LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.