
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 350mW. RoHS compliant and supplied on tape and reel.
Onsemi MMBT4403 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| DC Current Gain-Min (hFE) | 20 |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -40V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT4403 to view detailed technical specifications.
No datasheet is available for this part.
