PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 surface mount package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 350mW. Packaged on a 10000-unit tape and reel.
Frequency200MHz
PackageSOT-23-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi MMBT4403-D87Z technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
hFE Min
100
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
200MHz
Weight
0.03g
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBT4403-D87Z Datasheet
Download the complete datasheet for Onsemi MMBT4403-D87Z to view detailed technical specifications.
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