The MMBT5087LT1 is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 50mA. It has a maximum power dissipation of 300mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a SOT-23-3 case and is available in tape and reel packaging.
PackageSOT-23-3
Current Rating-50mA
PolarityPNP
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Technical Specifications
Onsemi MMBT5087LT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 250 |
| Lead Free | Contains Lead |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBT5087LT1 Datasheet
Download the complete datasheet for Onsemi MMBT5087LT1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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