PNP Bipolar Junction Transistor in SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 50V, collector current rating of -50mA, and a minimum DC current gain (hFE) of 250. Operates with a transition frequency of 40MHz and a maximum power dissipation of 225mW. Supplied on a 3000-piece tape and reel, this component is RoHS compliant.
Frequency40MHz
PackageSOT-23-3
Current Rating-50mA
PolarityPNP
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Technical Specifications
Onsemi MMBT5087LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
-50V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
-50mA
Emitter Base Voltage (VEBO)
3V
Frequency
40MHz
Gain Bandwidth Product
40MHz
Height
0.04inch
hFE Min
250
Lead Free
Lead Free
Length
0.119inch
Max Breakdown Voltage
50V
Max Collector Current
50mA
Max Frequency
40MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
40MHz
DC Rated Voltage
-50V
Width
0.055inch
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBT5087LT1G Datasheet
Download the complete datasheet for Onsemi MMBT5087LT1G to view detailed technical specifications.
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