
PNP Bipolar Junction Transistor in SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 50V, collector current rating of -50mA, and a minimum DC current gain (hFE) of 250. Operates with a transition frequency of 40MHz and a maximum power dissipation of 225mW. Supplied on a 3000-piece tape and reel, this component is RoHS compliant.
Onsemi MMBT5087LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | -50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| Height | 0.04inch |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 0.119inch |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 50mA |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -50V |
| Width | 0.055inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT5087LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
