NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 30V Collector-Emitter Voltage (VCEO) and a 50mA maximum collector current. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Supplied on a 3000-piece tape and reel.
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Onsemi MMBT5088LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1.01mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 50mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 30V |
| Width | 1.4mm |
| RoHS | Compliant |
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