The MMBT5401LT3 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 150V and a collector-emitter saturation voltage of 500mV. It has a current rating of 500mA and a gain bandwidth product of 300MHz. The transistor is packaged in a SOT-23-3 package and is suitable for operating temperatures between -55°C and 150°C. It is not RoHS compliant and contains lead.
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Onsemi MMBT5401LT3 technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 50 |
| Lead Free | Contains Lead |
| Max Collector Current | 50nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -150V |
| RoHS | Not Compliant |
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