PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage of -150V and a collector base voltage of -160V. Offers a maximum collector current of 500mA and a transition frequency of 300MHz. This RoHS compliant component operates from -55°C to 150°C.
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Onsemi MMBT5401LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | -150V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 500mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -150V |
| RoHS | Compliant |
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