NPN Bipolar Junction Transistor (BJT) in a 3-lead SOT-23 (TO-236) package. Features a 50V collector-emitter breakdown voltage (VCEO) and a 60V collector-base breakdown voltage (VCBO). Offers a maximum collector current of 200mA and a low collector-emitter saturation voltage of 600mV. Operates with a transition frequency of 700MHz and a minimum hFE of 250. Supplied on a 3000-piece tape and reel, this RoHS compliant component is suitable for a wide temperature range from -55°C to 150°C.
Frequency700MHz
PackageSOT-23-3
Current Rating200mA
PolarityNPN
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Technical Specifications
Onsemi MMBT6428LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 700MHz |
| Gain Bandwidth Product | 700MHz |
| Height | 1.11mm |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 200mA |
| Max Frequency | 700MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 700MHz |
| DC Rated Voltage | 50V |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT6428LT1G Datasheet
Download the complete datasheet for Onsemi MMBT6428LT1G to view detailed technical specifications.
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